R2POWER300

Preparing R2 extension to 300mm for BCD Smart Power and Power Discrete

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R2POWER300 is committed to challenge the following objectives:

  • Development and manufacturing of a multi-KET Pilot Line (i.e. Nanoelectronics, Nanotechnology, Advanced Manufacturing;
  • Energy Efficiency and CO2 Reduction megatrends.

The strategy of this Pilot Line is based on two main pillars:

  • continuous technological innovation on smart-power, facing with the more demanding market applications;
  • industrial policy focused on high quality and mass production’s cost optimization.

The applications of smart power ICs span from mid-power automotive, coping with extremely challenging operating temperature to industrial controllers, battery management systems for HEV, FEV and electric bikes, domestic and outdoor lighting based on LED drivers, computer and industrial peripherals, drivers for MEMS sensors and actuations, and so on.

To keep the competitiveness of European power semiconductor high enough vs. the Far East, it is essential to have a continuous technology and product enhancement, to meet new market requirements asking for a further cost saving yet high performance production.

The project aims to achieve the following goals:

To evaluate, characterize and optimize the equipments and process necessary to achieve the new BCD10 technology, featuring 90nm lithography, at 300mm wafer size. BCD (i.e. Bipolar + CMOS + DMOS) is a unique smart power technology invented by ST in the mid ‘80s (CMOS’s gate length was 4 mm at that time!). As of today BCD is one of the key technology assets of ST and the indefatigable evolution and challenging roadmap makes ST a world-class leader on smart power ICs.

Advanced Packaging technology. The main advantages will be: tighter package integration and miniaturization, shielding, shortening the interconnections, improve the performance and lowering the manufacturing cost.

The project has started on July 2015 and will run for 36 months.